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| Datasheet File OCR Text: |
| NTE395 Silicon PNP Transistor Wide Band Linear Amplifier Absolute Maximum Ratings: Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Power Dissipation (TA = +25C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 225mW Power Dissipation (TC = +25C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +200C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 485C/W Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 775C/W Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector-Base Cutoff Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Static Forward Current Transfer Ratio Base-Emitter Voltage Knee Voltage Transition Frequency Maximum Oscillation Frequency Output Capacitance Symbol ICBO Test Conditions VCB = 15V, IE = 0 Min - 30 25 3 20 - - 1.4 - - Typ - - - - - 0.75 0.8 2.3 6.5 1.1 Max 50 - - - - - - - - - V V GHz GHz pF Unit nA V V V V(BR)CBO IC = 100A, IE = 0 V(BR)CEO IC = 5mA, IB = 0 V(BR)EBO IE = 10A, IC = 0 h21E VBE VCEK fT f C22b VCE = 10V, IC = 10mA, Note 1 VCE = 10V, IC = 10mA IC = 20mA, Note 2 VCE = 15V, IC = 10mA VCE = 15V, IC = 10mA VCB = 15V, IE = 0, f = 1MHz Note 1. Pulsed. Note 2. VCEK tested with IC = 100ma and IB = values for which IC = 110mA at VCE = 1V. Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Power Gain Wide Band Power Gain Noise Figure GP NF Symbol Test Conditions VCE = 15V, IC = 10mA, f = 800MHz f = 40 to 860MHz, RS = RL = 75 VCE = 15V, IC = 3mA, f = 200MHz VCE = 15V, IC = 10mA, f = 800MHz VCE = 15V, IC = 10mA, f = 200MHz VCE = 15V, IC = 10mA, f = 800MHz Min - - - - - - Typ 10 16 2.5 3.5 3.0 4.0 Max - - - - - - Unit dB dB dB dB dB dB .220 (5.58) Dia Max .185 (4.7) Dia Max .190 (4.82) .030 (.762) Max .500 (12.7) Min .018 (0.45) B E C 45 Case .040 (1.02) |
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